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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD569 description high collector current:: i c = 7a low collector saturation voltage : v ce(sat) = 0.5v(max)@i c = 5a complement to type 2sb708 applications designed for low-frequency power amplifiers and low-speed switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 7 v i c collector current-continuous 7 a i cm collector current-peak 15 a i b b base current-continuous 3.5 a total power dissipation @ t c =25 40 p c total power dissipation @ t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD569 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 80 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 0.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.5a b 1.5 v i cbo collector cutoff current v cb = 80v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 3a; v ce = 1v 40 200 h fe-2 dc current gain i c = 5a; v ce = 1v 20 ? h fe- 1 classifications m l k 40-80 60-120 100-200 isc website www.iscsemi.cn 2 |
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